Invention Grant
- Patent Title: Memory device and memory system
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Application No.: US17686835Application Date: 2022-03-04
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Publication No.: US12080361B2Publication Date: 2024-09-03
- Inventor: Yasuhiro Shiino , Masahiko Iga , Shinji Suzuki
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP 21138940 2021.08.27
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C7/08 ; G11C7/10 ; G11C16/10 ; G11C16/26

Abstract:
A second conductor, third conductor, and fourth conductor sandwiches a first layer together with a first semiconductor. The fourth conductor is positioned farther from the first conductor than the third conductor, which is positioned farther from first conductor than the second conductor. A first circuit is configured to apply a first potential to the first and second conductors, apply a second potential lower than the first potential to the third conductor in parallel with the application of the first potential, and apply a third potential higher than the second potential and lower than the first potential to the fourth conductor in parallel with the application of the first potential.
Public/Granted literature
- US20230064140A1 MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2023-03-02
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