Invention Grant
- Patent Title: Through-hole electrode substrate
-
Application No.: US17725627Application Date: 2022-04-21
-
Publication No.: US12080637B2Publication Date: 2024-09-03
- Inventor: Satoru Kuramochi , Sumio Koiwa , Hidenori Yoshioka
- Applicant: Dai Nippon Printing Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee: Dai Nippon Printing Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP 13241392 2013.11.21
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/48 ; H01L25/065 ; H01L25/18 ; H05K1/11 ; H05K3/28 ; H05K3/44 ; H01L23/00 ; H01L23/13 ; H01L23/15

Abstract:
A through-hole electrode substrate includes a substrate including a through-hole extending from a first aperture of a first surface to a second aperture of a second surface, an area of the second aperture being larger than that of the first aperture, the through-hole having a minimum aperture part between the first aperture and the second aperture, wherein an area of the minimum aperture part in a planer view is smallest among a plurality of areas of the through-hole in a planer view, a filler arranged within the through-hole, and at least one gas discharge member contacting the filler exposed to one of the first surface and the second surface.
Public/Granted literature
- US20220246512A1 THROUGH-HOLE ELECTRODE SUBSTRATE Public/Granted day:2022-08-04
Information query
IPC分类: