Invention Grant
- Patent Title: Photoresist patterning process
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Application No.: US16825388Application Date: 2020-03-20
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Publication No.: US12085858B2Publication Date: 2024-09-10
- Inventor: Huixiong Dai , Srinivas D. Nemani , Steven Hiloong Welch , Mangesh Ashok Bangar , Ellie Y. Yieh
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/16 ; G03F7/38 ; H01L21/027 ; H01L21/266 ; H01L21/311
Abstract:
A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.
Public/Granted literature
- US20210294215A1 PHOTORESIST PATTERNING PROCESS Public/Granted day:2021-09-23
Information query
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