Invention Grant
- Patent Title: Optoelectronic semiconductor device having dielectric layers, and method for manufacturing the same
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Application No.: US17421394Application Date: 2019-12-19
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Publication No.: US12087878B2Publication Date: 2024-09-10
- Inventor: Laura Kreiner , Martin Rudolf Behringer
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: VIERING, JENTSCHURA & PARTNER MBB
- Priority: DE 2019100624.4 2019.01.11
- International Application: PCT/EP2019/086456 2019.12.19
- International Announcement: WO2020/144047A 2020.07.16
- Date entered country: 2021-07-08
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L31/0216 ; H01L31/036 ; H01L31/18 ; H01L33/00 ; H01L33/16 ; H01L33/44 ; F21S41/14 ; G03B21/20

Abstract:
An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.
Public/Granted literature
- US20220093826A1 OPTOELECTRONIC SEMICONDUCTOR DEVICE HAVING DIELECTRIC LAYERS, AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-03-24
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