公开(公告)号：US20220020811A1

公开(公告)日：2022-01-20

申请号：US17310394

申请日：2020-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Tansen Varghese ,  Alvaro Gomez-Iglesias

IPC: H01L27/15 ,  H01L25/18

Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconducting recombination layer (1) for generating electromagnetic radiation by charge carrier recombination, a plurality of first contact elements (31) on a first side (11) of the recombination layer, at least one second contact element (32) on the first side of the recombination layer, a plurality of semiconducting first connection regions (21), and at least one semiconducting second connection region (22). Each of the first connection regions is arranged between a first contact element and the first side of the recombination layer. The second connection region is arranged between the second contact element and the first side of the recombination layer. The first connection regions comprise a first type of doping and the second connection region comprises a second type of doping complementary to the first type of doping. The first contact elements are individually and independently electrically contactable.

公开(公告)号：US11132932B2

公开(公告)日：2021-09-28

申请号：US16484755

申请日：2018-01-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer

IPC: G09G3/32 ,  G09G3/20

Abstract: A method for operating a light-emitting device includes operating, at least for some pixels, a selected subpixel of a pixel and at least one further subpixel of the pixel configured to emit light of a different color to display a pure color corresponding to a dominant wavelength of the selected subpixel and providing, at least for some pixels, a correction matrix associated with the pixel for adjusting brightness of the subpixels of the pixel, wherein the correction matrix is provided by determining, at least for some pixels, a brightness of each subpixel of the pixel necessary to emit light of a given color, determining, at least for some pixels, a dominant wavelength (λr, λg, λb) of each subpixel, plotting dominant wavelengths (λr, λg, λb) of each subpixel in a CIE-XY color space and forming color triangles, and determining inner triangles of the color triangles in pairs.

公开(公告)号：US20200005700A1

公开(公告)日：2020-01-02

申请号：US16484755

申请日：2018-01-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer

IPC: G09G3/20 ,  G09G3/32

Abstract: A method for operating a light-emitting device includes operating, at least for some pixels, a selected subpixel of a pixel and at least one further subpixel of the pixel configured to emit light of a different color to display a pure color corresponding to a dominant wavelength of the selected subpixel and providing, at least for some pixels, a correction matrix associated with the pixel for adjusting brightness of the subpixels of the pixel, wherein the correction matrix is provided by determining, at least for some pixels, a brightness of each subpixel of the pixel necessary to emit light of a given color, determining, at least for some pixels, a dominant wavelength (λr, λg, λb) of each subpixel, plotting dominant wavelengths (λr, λg, λb) of each subpixel in a CIE-XY color space and forming color triangles, and determining inner triangles of the color triangles in pairs.

公开(公告)号：US12206058B2

公开(公告)日：2025-01-21

申请号：US17435975

申请日：2020-03-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Christoph Klemp

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44 ,  H01L33/48

Abstract: In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.

公开(公告)号：US12087878B2

公开(公告)日：2024-09-10

申请号：US17421394

申请日：2019-12-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Laura Kreiner ,  Martin Rudolf Behringer

IPC: H01L33/22 ,  H01L31/0216 ,  H01L31/036 ,  H01L31/18 ,  H01L33/00 ,  H01L33/16 ,  H01L33/44 ,  F21S41/14 ,  G03B21/20

CPC classification number: H01L33/22 ,  H01L31/02161 ,  H01L31/036 ,  H01L31/1828 ,  H01L33/0083 ,  H01L33/16 ,  H01L33/44 ,  F21S41/14 ,  G03B21/2006

Abstract: An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.

公开(公告)号：US20230283040A1

公开(公告)日：2023-09-07

申请号：US18006077

申请日：2021-07-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jan Wagner ,  Lars Naehle ,  Sven Gerhard ,  Alfred Lell ,  Harald Koenig ,  Christoph Eichler ,  Georg Brüderl ,  Martin Rudolf Behringer

IPC: H01S5/02 ,  H01S5/40 ,  H01S5/22 ,  H01S5/026 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01S5/0207 ,  H01S5/4087 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/026 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/34

Abstract: The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation. The invention also relates to a radiation-emitting semiconductor body.

公开(公告)号：US20190229241A1

公开(公告)日：2019-07-25

申请号：US16331121

申请日：2017-09-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Brendan Holland ,  Jana Sommerfeld ,  Sabine vom Dorp

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

公开(公告)号：US20180287008A1

公开(公告)日：2018-10-04

申请号：US15940929

申请日：2018-03-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plößl ,  Siegfried Herrmann ,  Martin Rudolf Behringer ,  Frank Singer ,  Thomas Schwarz

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/48

Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.

公开(公告)号：US20180212404A1

公开(公告)日：2018-07-26

申请号：US15845983

申请日：2017-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Hubert Halbritter ,  Martin Rudolf Behringer

IPC: H01S5/183 ,  H01S5/187 ,  H01S5/022 ,  H01S5/02 ,  H01S5/40

CPC classification number: H01S5/18375 ,  H01S5/0217 ,  H01S5/0226 ,  H01S5/187 ,  H01S5/4087

Abstract: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.

公开(公告)号：US20150236199A1

公开(公告)日：2015-08-20

申请号：US14430897

申请日：2013-09-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Martin Rudolf Behringer ,  Christoph Klemp ,  Markus Broell

IPC: H01L33/20 ,  G06K19/06 ,  G06K19/067 ,  H01L33/00

CPC classification number: H01L33/20 ,  G06K19/06028 ,  G06K19/067 ,  H01L23/544 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/44 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/5442 ,  H01L2223/54433 ,  H01L2223/5448 ,  H01L2223/54486 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic component (101, 301, 501), comprising a substrate (103, 303, 503), on which a semiconductor layer sequence (105, 305, 505) has been placed, wherein the semiconductor layer sequence (105, 305, 505) has at least one identifier (115, 315) for identifying the component (101, 301, 501). The invention also relates to a method for producing an optoelectronic component (101, 301, 501).

Abstract translation: 本发明涉及一种包括衬底（103,303,503）的光电子部件（101,301,501），其上放置了半导体层序列（105,305,505），其中半导体层序列（105,305,503） ，305,505）具有用于识别组件（101,301,501）的至少一个标识符（115,315）。 本发明还涉及一种用于制造光电子部件（101,301,501）的方法。