Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US18242550Application Date: 2023-09-06
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Publication No.: US12089512B2Publication Date: 2024-09-10
- Inventor: Shih-Wei Su , Da-Jun Lin , Chih-Wei Chang , Bin-Siang Tsai , Ting-An Chien
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2011221313.1 2020.11.05
- The original application number of the division: US17114438 2020.12.07
- Main IPC: H10N70/00
- IPC: H10N70/00 ; H10B63/00

Abstract:
The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a resistance random access memory on the substrate, an upper electrode, a lower electrode and a resistance conversion layer between the upper electrode and the lower electrode, and a cap layer covering the outer side of the resistance random access memory, the cap layer has an upper half and a lower half, and the upper half and the lower half contain different stresses.
Public/Granted literature
- US20230413690A1 Semiconductor structure Public/Granted day:2023-12-21
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