发明授权
- 专利标题： Washing method, manufacturing method, and washing device for polycrystalline silicon
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申请号： US17040874申请日： 2019-03-25
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公开(公告)号： US12091645B2公开(公告)日： 2024-09-17
- 发明人: Hiroyuki Tasaki , Kazuhiro Kawaguchi
- 申请人： TOKUYAMA CORPORATION
- 申请人地址： JP Yamaguchi
- 专利权人： TOKUYAMA CORPORATION
- 当前专利权人： TOKUYAMA CORPORATION
- 当前专利权人地址： JP Yamaguchi
- 代理机构： Casimir Jones, S.C.
- 代理商 Robert A. Goetz
- 优先权： JP 18060772 2018.03.27
- 国际申请： PCT/JP2019/012379 2019.03.25
- 国际公布： WO2019/188912A 2019.10.03
- 进入国家日期： 2020-09-23
- 主分类号： C11D7/08
- IPC分类号： C11D7/08 ; C01B33/037
摘要：
In an embodiment of the present invention, contaminants contained in polycrystalline silicon are removed to obtain highly-pure polycrystalline silicon, with only a small amount of etching. Polycrystalline silicon is washed with use of: a first washing step of bringing fluonitric acid into contact with the polycrystalline silicon; and a second washing step of bringing a non-oxidizing chemical containing hydrofluoric acid into contact with the polycrystalline silicon that has undergone the first washing step.
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