Invention Grant
- Patent Title: Stacked semiconductor device
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Application No.: US17884963Application Date: 2022-08-10
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Publication No.: US12094555B2Publication Date: 2024-09-17
- Inventor: Jae Hyung Park , Seung Geun Baek , Dong Uk Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Priority: KR 20220031987 2022.03.15
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C5/02 ; G11C8/10 ; H01L25/065 ; H01L25/18

Abstract:
A stacked semiconductor device includes at least one upper chip including a plurality of channels each including first and second pseudo-channels; and a plurality of transfer control circuits respectively corresponding to the channels and each configured to output channel commands according to a channel designation signal designating one of the first and second pseudo-channels and a location information signal indicating a location of a corresponding channel of the channels, and transmit first and second data words between the corresponding channel and a lower chip according to the channel commands.
Public/Granted literature
- US20230298631A1 STACKED SEMICONDUCTOR DEVICE Public/Granted day:2023-09-21
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