- 专利标题: Stacked semiconductor device
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申请号: US17884963申请日: 2022-08-10
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公开(公告)号: US12094555B2公开(公告)日: 2024-09-17
- 发明人: Jae Hyung Park , Seung Geun Baek , Dong Uk Lee
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T GROUP LLP
- 优先权: KR 20220031987 2022.03.15
- 主分类号: G11C5/00
- IPC分类号: G11C5/00 ; G11C5/02 ; G11C8/10 ; H01L25/065 ; H01L25/18
摘要:
A stacked semiconductor device includes at least one upper chip including a plurality of channels each including first and second pseudo-channels; and a plurality of transfer control circuits respectively corresponding to the channels and each configured to output channel commands according to a channel designation signal designating one of the first and second pseudo-channels and a location information signal indicating a location of a corresponding channel of the channels, and transmit first and second data words between the corresponding channel and a lower chip according to the channel commands.
公开/授权文献
- US20230298631A1 STACKED SEMICONDUCTOR DEVICE 公开/授权日:2023-09-21
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