Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17546213Application Date: 2021-12-09
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Publication No.: US12094940B2Publication Date: 2024-09-17
- Inventor: Doohyun Lee , Heonjong Shin , Seon-Bae Kim , Minchan Gwak , Jinyoung Park , Hyunho Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: KR 20210070658 2021.06.01
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L21/8238 ; H01L27/092 ; H01L29/417 ; H01L29/786 ; H01L29/06

Abstract:
A semiconductor device may include an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, a first lower interconnection line on the gate electrode, and a second lower interconnection line on the active contact and at the same level as the first lower interconnection line. The gate electrode may include an electrode body portion and an electrode protruding portion, wherein the electrode protruding portion protrudes from a top surface of the electrode body portion and is in contact with the first lower interconnection line thereon. The active contact may include a contact body portion and a contact protruding portion, wherein the contact protruding portion protrudes from a top surface of the contact body portion and is in contact with the second lower interconnection line thereon.
Public/Granted literature
- US20220384591A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-12-01
Information query
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