Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17765046Application Date: 2020-10-05
-
Publication No.: US12095440B2Publication Date: 2024-09-17
- Inventor: Kazuaki Ohshima , Hitoshi Kunitake , Yuto Yakubo , Takayuki Ikeda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP 19190550 2019.10.17
- International Application: PCT/IB2020/059313 2020.10.05
- International Announcement: WO2021/074737A 2021.04.22
- Date entered country: 2022-03-30
- Main IPC: H03H7/38
- IPC: H03H7/38 ; H01L21/02 ; H01L21/822 ; H01L27/088 ; H03F3/19 ; H03F3/60

Abstract:
An amplifier is formed in a wiring layer. A semiconductor device includes a second layer over a first layer with a metal oxide therebetween. The first layer includes a first transistor including a first semiconductor layer containing silicon. The second layer includes an impedance matching circuit, and the impedance matching circuit includes a second transistor including a second semiconductor layer containing gallium. The first transistor forms first coupling capacitance between the first transistor and the metal oxide, and the impedance matching circuit forms second coupling capacitance between the impedance matching circuit and the metal oxide. The impedance matching circuit is electrically connected to the metal oxide through the second coupling capacitance. The metal oxide inhibits the influence of first radiation noise emitted from the impedance matching circuit on the operation of the first transistor.
Public/Granted literature
- US20220352865A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-11-03
Information query