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公开(公告)号：US12200934B2
公开(公告)日：2025-01-14
申请号：US17640549
申请日：2020-09-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hajime Kimura , Hitoshi Kunitake
Abstract: A semiconductor device with high storage capacity is provided. The semiconductor device includes first to sixth insulators, first to third conductors, and first to third material layers. The first conductor overlaps with a first insulator and a first material layer. A first region of the first material layer overlaps with a second material layer, a second conductor, a second insulator, and a third insulator. The third material layer is positioned in a region including a second region of the first material layer and top surfaces of the second material layer, the second conductor, the second insulator, and the third insulator; a fourth insulator is positioned over the third material layer; the sixth insulator is positioned over the fourth insulator; and a fifth insulator is positioned over the sixth insulator. The third conductor is positioned over the fifth insulator overlapping with the second region of the first material layer. The first to third material layers include oxide containing indium, an element M (M is aluminum, gallium, tin, or titanium), and zinc.
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公开(公告)号：US12009432B2
公开(公告)日：2024-06-11
申请号：US17679413
申请日：2022-02-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hitoshi Kunitake , Yasuhiro Jinbo , Naoki Okuno , Masahiro Takahashi , Tomonori Nakayama
IPC: H01L29/786 , G09G3/32
CPC classification number: H01L29/78603 , G09G3/32 , H01L29/78681 , G09G2300/0426
Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.
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公开(公告)号：US11876138B2
公开(公告)日：2024-01-16
申请号：US17284553
申请日：2019-10-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Eri Sato , Tatsuya Onuki , Yuto Yakubo , Hitoshi Kunitake
IPC: H03F3/45 , H01L29/786 , H01L29/24
CPC classification number: H01L29/7869 , H01L29/24 , H01L29/78669 , H01L29/78678
Abstract: A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.
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公开(公告)号：US12101067B2
公开(公告)日：2024-09-24
申请号：US17614690
申请日：2020-05-22
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Minato Ito , Hitoshi Kunitake , Takayuki Ikeda
IPC: H03F3/45 , H01L27/12 , H01L29/786 , H10B12/00
CPC classification number: H03F3/45475 , H01L27/1225 , H01L27/1255 , H01L29/78648 , H01L29/7869 , H10B12/00 , H03F2203/45594
Abstract: A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.
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公开(公告)号：US20240154040A1
公开(公告)日：2024-05-09
申请号：US18411830
申请日：2024-01-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Eri SATO , Tatsuya Onuki , Yuto Yakubo , Hitoshi Kunitake
IPC: H01L29/786 , H01L29/24
CPC classification number: H01L29/7869 , H01L29/24 , H01L29/78669 , H01L29/78678
Abstract: A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.
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Patent Agency Ranking
公开(公告)号：US20220293603A1
公开(公告)日：2022-09-15
申请号：US17639744
申请日：2020-08-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hitoshi Kunitake , Tatsuya ONUKI , Hajime KIMURA , Takayuki IKEDA , Shunpei YAMAZAKI
IPC: H01L27/108 , H01L27/12 , H01L29/786
Abstract: A semiconductor device that occupies a small area is provided. The semiconductor device includes a first transistor including a first oxide semiconductor; a second transistor including a second oxide semiconductor; a capacitor element; a first insulator; and a first conductor in contact with a source or a drain of the second transistor. The capacitor element includes a second conductor, a third conductor, and a second insulator. The first transistor, the second transistor, and the first conductor are placed to be embedded in the first insulator. The second conductor is placed in contact with a top surface of the first conductor and a top surface of a gate of the first transistor. The second insulator is placed over the second conductor and the first insulator. The third conductor is placed to cover the second conductor with the second insulator therebetween.
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公开(公告)号：US11410716B2
公开(公告)日：2022-08-09
申请号：US16962309
申请日：2019-01-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kiyoshi Kato , Tomoaki Atsumi , Shuhei Nagatsuka , Hitoshi Kunitake
IPC: G11C8/00 , G11C11/408 , H01L27/108
Abstract: A novel storage device and a novel semiconductor device are provided.
In the storage device, a cell array including a plurality of memory cells is stacked above a control circuit, and the cell array operates separately in a plurality of blocks. Furthermore, a plurality of electrodes are included between the control circuit and the cell array. The electrode is provided for a corresponding block to overlap with the block, and a potential of the electrode can be changed for each block. The electrode has a function of aback gate of a transistor included in the memory cell, and a potential of the electrode is changed for each block, whereby the electrical characteristics of the transistor included in the memory cell can be changed. Moreover, the electrode can reduce noise caused in the control circuit.-
公开(公告)号：US11335812B2
公开(公告)日：2022-05-17
申请号：US17011385
申请日：2020-09-03
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Hajime Kimura , Hitoshi Kunitake
IPC: H01L27/00 , H01L29/00 , H01L29/786 , H01L27/108
Abstract: A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.
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公开(公告)号：US12261570B2
公开(公告)日：2025-03-25
申请号：US17606825
申请日：2020-05-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kazuaki Ohshima , Hitoshi Kunitake , Tatsunori Inoue
Abstract: To provide a mixer and a semiconductor device which each have a small circuit area and each of which operation capability is inhibited from being decreased due to heat. The mixer includes a differential portion, a current source, a first load, an input terminal, and a first output terminal; the differential portion includes a first and a second transistor; and each of the first and the second transistors includes a metal oxide in a channel formation region. A first terminal of each of the first and the second transistors is electrically connected to the input terminal and a current source and a second terminal of the first transistor is electrically connected to a first terminal of the first load and the first output terminal. The first load has a function of supplying a current between the first terminal and a second terminal of the first load by application of voltage to the second terminal of the first load, and the current source has a function of supplying a constant current to the current source from the first terminal of each of the first and the second transistors. The current source includes a transistor including silicon in a channel formation region, and the differential portion is positioned above the current source.
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公开(公告)号：US12237019B2
公开(公告)日：2025-02-25
申请号：US17772740
申请日：2020-10-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Takayuki Ikeda , Hitoshi Kunitake
Abstract: A low-power memory device in which a NAND flash memory and a controller are connected to each other with a short wiring, the controller and a cache memory are connected to each other with a short wiring, and signal transmission delay is small is provided. For example, the NAND flash memory is formed using a Si transistor formed with a single crystal silicon substrate. Since an OS transistor can be formed by a method such as a thin-film method, the cache memory formed using the OS memory can be stacked over the NAND flash memory. When the NAND flash memory and the cache memory are formed in one chip, the NAND flash memory and the controller can be connected to each other with a short wiring, and the controller and the cache memory can be connected to each other with a short wiring.
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