Invention Grant
- Patent Title: Interrupt signaling for a memory device
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Application No.: US17116180Application Date: 2020-12-09
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Publication No.: US12099746B2Publication Date: 2024-09-24
- Inventor: Markus Balb , Thomas Hein , Heinz Hoenigschmid
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06

Abstract:
Methods, systems, and devices for interrupt signaling for a memory device are described. A memory device may transmit an interrupt signal to a host device to alter a sequence of operations that would otherwise be executed by the host device. The memory device may transmit the interrupt signal in response to detecting an error condition at the memory device, a performance degradation at the memory device, or another trigger event. In some examples, the memory device may include a dedicated interrupt pin for transmitting interrupt signals. Alternatively, the memory device may transmit interrupt signals via a pin also sued to transmit error detection codes. For example, the memory device may transmit an interrupt signal before or after an error detection code or may invert the error detection code to indicate the interrupt, in which case the inverted error detection code may act as an interrupt signal.
Public/Granted literature
- US20210181990A1 INTERRUPT SIGNALING FOR A MEMORY DEVICE Public/Granted day:2021-06-17
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