- Patent Title: Semiconductor device with implant and method of manufacturing same
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Application No.: US18306851Application Date: 2023-04-25
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Publication No.: US12100738B2Publication Date: 2024-09-24
- Inventor: Yu-Chang Lin , Tien-Shun Chang , Chun-Feng Nieh , Huicheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16573897 2019.09.17
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/225 ; H01L21/265 ; H01L21/266 ; H01L21/324 ; H01L29/06 ; H01L29/66 ; H01L29/78
Abstract:
A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm−3 and about 1020 cm−3.
Public/Granted literature
- US20230261055A1 Semiconductor Device with Implant and Method of Manufacturing Same Public/Granted day:2023-08-17
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