- 专利标题： Sequential infiltration synthesis of group 13 oxide electronic materials
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申请号： US16515718申请日： 2019-07-18
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公开(公告)号： US12104249B2公开(公告)日： 2024-10-01
- 发明人: Alex B. Martinson , Seth B. Darling , Ruben Waldman
- 申请人： UCHICAGO ARGONNE, LLC , THE UNIVERSITY OF CHICAGO
- 申请人地址： US IL Chicago
- 专利权人： UCHICAGO ARGONNE, LLC,THE UNIVERSITY OF CHICAGO
- 当前专利权人： UCHICAGO ARGONNE, LLC,THE UNIVERSITY OF CHICAGO
- 当前专利权人地址： US IL Chicago; US IL Chicago
- 代理机构： FOLEY & LARDNER LLP
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C08L33/08 ; C08L33/12 ; C08L39/06 ; C23C16/455
摘要：
The sequential infiltration synthesis (SIS) of group 13 indium and gallium oxides (In2O3 and Ga2O3) into polymethyl methacrylate (PMMA) thin films is demonstrated. Examples highlight the an SIS process using trimethylindium (TMIn) and trimethylgallium (TMGa), respectively, with water. In situ Fourier transform infrared (FTIR) spectroscopy reveals that these metal alkyl precursors reversibly associate with the carbonyl groups of PMMA in analogy to trimethylaluminum (TMAl), however with significantly lower affinity. SIS with TMIn and water enables the growth of In2O3 at 80° C., well below the onset temperature of atomic layer deposition (ALD) using these precursors.
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