Invention Grant
- Patent Title: In-situ CMP self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion
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Application No.: US18362797Application Date: 2023-07-31
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Publication No.: US12107004B2Publication Date: 2024-10-01
- Inventor: Zhen Yu Guan , Hsun-Chung Kuang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- The original application number of the division: US17070853 2020.10.14
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L23/532

Abstract:
A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.
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