- 专利标题： Semiconductor device, semiconductor module, vehicle, and manufacturing method of semiconductor device
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申请号： US17581970申请日： 2022-01-23
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公开(公告)号： US12107030B2公开(公告)日： 2024-10-01
- 发明人: Sho Takano
- 申请人： FUJI ELECTRIC CO., LTD.
- 申请人地址： JP Kanagawa
- 专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Kanagawa
- 优先权： JP 21045102 2021.03.18
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; B60L50/00 ; H01L21/48 ; H01L23/13 ; H01L23/24 ; H01L23/538 ; H01L25/07
摘要：
Provided is a semiconductor device including: a laminated substrate in which a circuit layer, an insulating layer, and a metal layer are sequentially laminated. A slit is formed in the circuit layer. A recess recessed from one surface side facing the insulating layer toward the other surface side is formed in the metal layer. The recess of the metal layer has a relaxation portion at least partially overlapping the slit of the circuit layer in a planar view.
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