Invention Grant
- Patent Title: Non-volatile memory device and a method for operating the same
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Application No.: US18202692Application Date: 2023-05-26
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Publication No.: US12112056B2Publication Date: 2024-10-08
- Inventor: Sang-Hyun Joo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20220080268 2022.06.30
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/56 ; G11C16/14 ; G11C16/16

Abstract:
In some embodiments, a non-volatile memory device includes a control logic circuit configured to generate a program signal and an erase signal based on control signals, a voltage generator configured to generate a program voltage and an erase voltage based on the program signal and the erase signal, a memory cell array including a memory cell, a string select transistor coupled to the memory cell, a bit-line coupled to the string select transistor, and a string select line coupled to the string select transistor, and a page buffer circuit coupled to the bit-line, and including a first precharge transistor that is configured to operate based on the program signal and the erase signal. The first precharge transistor is configured to apply the program voltage and the erase voltage to the bit-line in response to the program signal and the erase signal, respectively.
Public/Granted literature
- US20240004572A1 NON-VOLATILE MEMORY DEVICE AND A METHOD FOR OPERATING THE SAME Public/Granted day:2024-01-04
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