- 专利标题： Semiconductor device with sense terminal
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申请号： US17717756申请日： 2022-04-11
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公开(公告)号： US12113041B2公开(公告)日： 2024-10-08
- 发明人: Noriko Okunishi , Toshiyuki Hata
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Rimon P.C.
- 优先权： JP 21093167 2021.06.02
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/495 ; H01L29/747 ; H01L29/78 ; H02K11/33 ; H02M7/00
摘要：
In order to reduce on-resistance in a semiconductor device to be used for high current applications, the semiconductor device includes a source terminal lead located between a gate terminal lead and a Kelvin terminal lead in plan view and electrically connected with a source terminal via a plurality of wires.
公开/授权文献
- US20220392865A1 SEMICONDUCTOR DEVICE 公开/授权日：2022-12-08
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