Invention Grant
- Patent Title: Integrated memory comprising secondary access devices between digit lines and primary access devices
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Application No.: US17877628Application Date: 2022-07-29
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Publication No.: US12114474B2Publication Date: 2024-10-08
- Inventor: Scott J. Derner , Charles L. Ingalls
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C11/4091 ; G11C11/4094 ; H01L29/78 ; H10B12/00

Abstract:
Some embodiments include an integrated assembly having a primary access transistor. The primary access transistor has a first source/drain region and a second source/drain region. The first and second source/drain regions are coupled to one another when the primary access transistor is in an ON mode, and are not coupled to one another when the primary access transistor is in an OFF mode. A charge-storage device is coupled with the first source/drain region. A digit line is coupled with the second source/drain region through a secondary access device. The secondary access device has an ON mode and an OFF mode. The digit line is coupled with the charge-storage device only when both the primary access transistor and the secondary access device are in their respective ON modes.
Public/Granted literature
- US20220367465A1 Integrated Memory Comprising Secondary Access Devices Between Digit Lines and Primary Access Devices Public/Granted day:2022-11-17
Information query