Invention Grant
- Patent Title: 3D memory semiconductor device and structure
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Application No.: US17461075Application Date: 2021-08-30
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Publication No.: US12114494B2Publication Date: 2024-10-08
- Inventor: Zvi Or-Bach , Jin-Woo Han , Eli Lusky
- Applicant: Monolithic 3D Inc.
- Applicant Address: US OR Klamath Falls
- Assignee: Monolithic 3D Inc.
- Current Assignee: Monolithic 3D Inc.
- Current Assignee Address: US OR Klamath Falls
- Agency: PatentPC/PowerPatent
- Agent Bao Tran
- Main IPC: H10B41/27
- IPC: H10B41/27 ; H10B43/27

Abstract:
A 3D memory device, the device including: a first vertical pillar, the first vertical pillar includes a transistor source; a second vertical pillar, the second vertical pillar includes the transistor drain, where the first vertical pillar and the second vertical pillar each functions as a source or functions as a drain for a plurality of overlaying horizontally-oriented memory transistors, where at least of one of the plurality of overlaying horizontally-oriented memory transistors is disposed between the first vertical pillar and the second vertical pillar, where the plurality of overlaying horizontally-oriented memory transistors are self-aligned being formed following a same lithography step, and where the first vertical pillar includes metal.
Public/Granted literature
- US20220005821A1 3D MEMORY SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2022-01-06
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