Invention Grant
- Patent Title: Mems inertial sensor with high resistance to stiction
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Application No.: US18147629Application Date: 2022-12-28
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Publication No.: US12117464B2Publication Date: 2024-10-15
- Inventor: Gabriele Gattere , Francesco Rizzini , Alessandro Tocchio
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: IT 2019000009651 2019.06.20
- Main IPC: G01P15/125
- IPC: G01P15/125 ; B81C1/00 ; G01P15/08

Abstract:
An inertial structure is elastically coupled through a first elastic structure to a supporting structure so as to move along a sensing axis as a function of a quantity to be detected. The inertial structure includes first and second inertial masses which are elastically coupled together by a second elastic structure to enable movement of the second inertial mass along the sensing axis. The first elastic structure has a lower elastic constant than the second elastic structure so that, in presence of the quantity to be detected, the inertial structure moves in a sensing direction until the first inertial mass stops against a stop structure and the second elastic mass can move further in the sensing direction. Once the quantity to be detected ends, the second inertial mass moves in a direction opposite to the sensing direction and detaches the first inertial mass from the stop structure.
Public/Granted literature
- US20230184806A1 MEMS INERTIAL SENSOR WITH HIGH RESISTANCE TO STICTION Public/Granted day:2023-06-15
Information query
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