- 专利标题: Memory device performing offset calibration and operating method thereof
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申请号: US17968052申请日: 2022-10-18
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公开(公告)号: US12125553B2公开(公告)日: 2024-10-22
- 发明人: Donghun Lee , Kiho Kim , Kihan Kim
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Muir Patent Law, PLLC
- 优先权: KR 20210144975 2021.10.27 KR 20220070295 2022.06.09
- 主分类号: G11C7/10
- IPC分类号: G11C7/10
摘要:
Disclosed are a memory device that performs offset calibration and a method of operating the memory device. The memory device includes an input/output pad configured to receive data from a device external, an on-die termination (ODT) circuit connected to the input/output pad, a plurality of receivers connected to the ODT circuit and configured to receive the data from the input/output pad, an offset calibration circuit configured to perform an offset calibration operation on data output from the plurality of receivers and output an offset correction, a first switch configured to provide a first voltage to the plurality of receivers, and a second switch configured to provide a second voltage to the plurality of receivers. During the offset calibration operation, the plurality of receivers receive a third voltage in response to the ODT circuit being enabled and the first voltage through the first switch.
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