- 专利标题： Electrical component with a dielectric passivation stack
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申请号： US17949325申请日： 2022-09-21
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公开(公告)号： US12125745B2公开(公告)日： 2024-10-22
- 发明人: Cheng-Po Chen , Reza Ghandi , David Richard Esler , David Mulford Shaddock , Emad Andarawis Andarawis , Liang Yin
- 申请人： General Electric Company
- 申请人地址： US NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Schenectady
- 代理机构： Fitch, Even, Tabin & Flannery LLP
- 分案原申请号： US16983380 2020.08.03
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/02 ; H01L23/00 ; H01L23/31 ; H01L23/532
摘要：
An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.
公开/授权文献
- US20230020337A1 ELECTRICAL COMPONENT WITH A DIELECTRIC PASSIVATION STACK 公开/授权日：2023-01-19
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