Invention Grant
- Patent Title: Bipolar transistor
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Application No.: US18383926Application Date: 2023-10-26
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Publication No.: US12125894B2Publication Date: 2024-10-22
- Inventor: Alexis Gauthier , Pascal Chevalier
- Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics France
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics France
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics France
- Current Assignee Address: FR Crolles; FR Montrouge
- Agency: Crowe & Dunlevy LLC
- Priority: FR 59284 2018.10.08
- The original application number of the division: US16591312 2019.10.02
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/732 ; H01L21/265
Abstract:
A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
Public/Granted literature
- US20240063290A1 BIPOLAR TRANSISTOR Public/Granted day:2024-02-22
Information query
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