Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17896907Application Date: 2022-08-26
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Publication No.: US12136469B2Publication Date: 2024-11-05
- Inventor: Shintaro Hayashi , Mitsuhiro Abe , Naoaki Kanagawa
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2022-043340 20220318
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C16/32 ; G11C16/04 ; G11C16/26

Abstract:
A semiconductor memory device includes a memory cell array, a storing unit that stores data read out from the memory cell array in storage circuits, an output circuit, and a control circuit. In response to a read request, the control circuit adjusts the value of a read pointer of the storing unit, controls the storing unit to sequentially output to the output circuit first and second data stored in first and second storage circuits of the storing unit, respectively, the read pointer having a first value that references the first storage circuit when the first data is output, and a second value that references the second storage circuit when the second data is output, and controls the output circuit to transmit the first and second data to the memory controller as dummy data, and thereafter to transmit at least third data to the memory controller as read data.
Public/Granted literature
- US20230298641A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2023-09-21
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