Invention Grant
- Patent Title: High voltage device and manufacturing method thereof
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Application No.: US17718101Application Date: 2022-04-11
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Publication No.: US12136650B2Publication Date: 2024-11-05
- Inventor: Chih-Wen Hsiung , Chun-Lung Chang , Kun-Huang Yu , Kuo-Chin Chiu , Wu-Te Weng
- Applicant: Richtek Technology Corporation
- Applicant Address: TW Zhubei
- Assignee: Richtek Technology Corporation
- Current Assignee: Richtek Technology Corporation
- Current Assignee Address: TW Zhubei
- Agency: Tung & Associates
- Priority: TW110113963 20210419
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/74 ; H01L29/06 ; H01L29/10 ; H01L29/66

Abstract:
A high voltage device includes: a semiconductor layer, a well, a body region, a body contact, a gate, a source, and a drain. The body contact is configured as an electrical contact of the body region. The body contact and the source overlap with each other to define an overlap region. The body contact has a depth from an upper surface of the semiconductor layer, wherein the depth is deeper than a depth of the source, whereby a part of the body contact is located vertically below the overlap region. A length of the overlap region in a channel direction is not shorter than a predetermined length, so as to suppress a parasitic bipolar junction transistor from being turning on when the high voltage device operates, wherein the parasitic bipolar junction transistor is formed by a part of the well, a part of the body region and a part of the source.
Public/Granted literature
- US20220336588A1 High Voltage Device and Manufacturing Method Thereof Public/Granted day:2022-10-20
Information query
IPC分类: