Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US17437143Application Date: 2020-03-30
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Publication No.: US12136663B2Publication Date: 2024-11-05
- Inventor: Shunpei Yamazaki , Tetsuya Kakehata , Yuichi Sato , Atsushi Shibazaki , Kazuki Tanemura , Takashi Hirose
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2019-076097 20190412,JP2019-076102 20190412
- International Application: PCT/IB2020/052988 WO 20200330
- International Announcement: WO2020/208458 WO 20201015
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/12 ; H01L29/786 ; H01L21/02 ; H01L21/8258 ; H01L27/06
Abstract:
A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.
Public/Granted literature
- US20220173228A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2022-06-02
Information query
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