公开(公告)号：US09508880B2

公开(公告)日：2016-11-29

申请号：US13649398

申请日：2012-10-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takashi Hirose ,  Ryosuke Motoyoshi

IPC: H01L29/12 ,  H01L29/06 ,  H01L29/04 ,  H01L33/00 ,  H01L31/0236

CPC classification number: H01L31/02363 ,  Y02E10/50

Abstract: It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step of forming a thin film including a metal having higher electronegativity than silicon and having a plurality of openings on a silicon substrate, a second step of soaking the silicon substrate subjected to the first step in a hydrofluoric acid solution containing oxidizer, and a third step of soaking the silicon substrate subjected to the second step in an ammonia aqueous solution containing oxidizer. By performing the steps in the above order, a minute uneven structure is formed on a surface of the silicon substrate to reduce the reflectance.

Abstract translation: 本发明的目的是提供一种可以尽可能地减少表面反射率的硅衬底的处理方法。 该方法包括：形成薄膜的第一步骤，该薄膜包括具有比硅更高的电负性且在硅衬底上具有多个开口的金属，第二步是将经过第一步骤的硅衬底浸入含有氧化剂的氢氟酸溶液中 以及将经过第二工序的硅衬底浸渍在含有氧化剂的氨水溶液中的第三工序。 通过按照上述顺序执行步骤，在硅衬底的表面上形成微小的凹凸结构以降低反射率。

公开(公告)号：US08987738B2

公开(公告)日：2015-03-24

申请号：US13628458

申请日：2012-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takashi Hirose ,  Naoto Kusumoto

IPC: H01L31/18 ,  H01L31/06 ,  H01L31/075 ,  H01L31/04 ,  H01L31/20 ,  H01L31/0264 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0747

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

Abstract translation: 提供了具有改善的电特性的光电转换装置。 光电转换装置具有通过第一硅半导体层和第二硅半导体层的堆叠形成窗口层的结构，并且第二硅半导体层的载流子浓度高于第一硅半导体层，并且具有开口 。 通过开口对第一硅半导体层进行光照射而不通过第二硅半导体层; 因此，可以降低窗口层中的光吸收损失。

公开(公告)号：US12136663B2

公开(公告)日：2024-11-05

申请号：US17437143

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Yuichi Sato ,  Atsushi Shibazaki ,  Kazuki Tanemura ,  Takashi Hirose

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8258 ,  H01L27/06

Abstract: A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

公开(公告)号：US11545578B2

公开(公告)日：2023-01-03

申请号：US17047710

申请日：2019-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasumasa Yamane ,  Takashi Hirose ,  Teruyuki Fujii ,  Hajime Kimura ,  Daigo Shimada

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/24 ,  H01L29/51 ,  H01L21/00

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

公开(公告)号：US09761749B2

公开(公告)日：2017-09-12

申请号：US14627298

申请日：2015-02-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takashi Hirose ,  Naoto Kusumoto

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/077

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.

公开(公告)号：US20130087789A1

公开(公告)日：2013-04-11

申请号：US13628458

申请日：2012-09-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takashi Hirose ,  Naoto Kusumoto

IPC: H01L31/0376

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced.