公开(公告)号：US12136663B2

公开(公告)日：2024-11-05

申请号：US17437143

申请日：2020-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Yuichi Sato ,  Atsushi Shibazaki ,  Kazuki Tanemura ,  Takashi Hirose

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8258 ,  H01L27/06

Abstract: A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

公开(公告)号：US11894397B2

公开(公告)日：2024-02-06

申请号：US17729017

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yuichi Sato ,  Hitoshi Nakayama

IPC: H01L27/12 ,  H01L29/24 ,  H10B12/00

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L29/24 ,  H10B12/30

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

公开(公告)号：US10522690B2

公开(公告)日：2019-12-31

申请号：US15908215

申请日：2018-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka Okazaki ,  Daisuke Matsubayashi ,  Yuichi Sato

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L21/441 ,  H01L29/78 ,  H01L27/12

Abstract: A semiconductor device in which parasitic capacitance is reduced is provided. A first insulating layer is deposited over a substrate. A first oxide insulating layer and an oxide semiconductor layer are deposited over the first insulating layer. A second oxide insulating layer is deposited over the oxide semiconductor layer and the first insulating layer. A second insulating layer and a first conductive layer are deposited over the second oxide insulating layer. A gate electrode layer, a gate insulating layer, and a third oxide insulating layer are formed by etching. A sidewall insulating layer including a region in contact with a side surface of the gate electrode layer is formed. A second conductive layer is deposited over the gate electrode layer, the sidewall insulating layer, the oxide semiconductor layer, and the first insulating layer. A third conductive layer is deposited over the second conductive layer. A low-resistance region is formed in the oxide semiconductor layer by performing heat treatment. An element contained in the second conductive layer moves from the second conductive layer to the oxide semiconductor layer side by performing the heat treatment. An element contained in the oxide semiconductor layer moves from the oxide semiconductor layer to the third conductive layer side by performing the heat treatment.

公开(公告)号：US10008587B2

公开(公告)日：2018-06-26

申请号：US14459597

申请日：2014-08-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshihiko Saito ,  Takehisa Hatano ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC: H01L21/336 ,  H01L21/311 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/31

CPC classification number: H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

公开(公告)号：US08951899B2

公开(公告)日：2015-02-10

申请号：US13681888

申请日：2012-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto Yamade ,  Junichi Koezuka ,  Miki Suzuki ,  Yuichi Sato

IPC: H01L21/425 ,  H01L21/336 ,  H01L21/265 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/265 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract translation: 为了提供一种能够具有稳定的电特性并实现高可靠性的氧化物半导体的半导体器件，通过对与氧化物半导体层接触的基底绝缘层进行脱水或脱氢处理， 可以降低基极绝缘层，并且随后进行氧掺杂处理，可以将与水和氢一起消除的氧气供应到基底绝缘层。 通过形成与水和氢含量降低并且氧含量增加的基极绝缘层接触的氧化物半导体层，在水和氢进入氧化物半导体层的过程中可以向氧化物半导体层提供氧气 被压制

公开(公告)号：US20140319517A1

公开(公告)日：2014-10-30

申请号：US14263479

申请日：2014-04-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei Noda ,  Yuichi Sato ,  Yuta Endo

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/26586 ,  H01L27/1156 ,  H01L29/7869

Abstract: To provide a transistor formed using an oxide semiconductor film with reduced oxygen vacancies. To provide a semiconductor device that operates at high speed. To provide a highly reliable semiconductor device. To provide a miniaturized semiconductor device. The semiconductor device includes an oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a protective insulating film that is above the oxide semiconductor film, the gate electrode, and the gate insulating film and includes a region containing phosphorus or boron.

Abstract translation: 提供使用具有减少的氧空位的氧化物半导体膜形成的晶体管。 提供高速运行的半导体器件。 提供高度可靠的半导体器件。 提供一种小型化的半导体器件。 半导体器件包括氧化物半导体膜; 与氧化物半导体膜重叠的栅电极; 氧化物半导体膜和栅电极之间的栅极绝缘膜; 以及在氧化物半导体膜，栅极电极和栅极绝缘膜之上的保护绝缘膜，并且包括含有磷或硼的区域。

公开(公告)号：US12041765B2

公开(公告)日：2024-07-16

申请号：US18232413

申请日：2023-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi Sato ,  Ryota Hodo ,  Yuta Iida ,  Tomoaki Moriwaka

IPC: H10B12/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L23/532

CPC classification number: H10B12/30 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3212 ,  H01L23/5329 ,  H10B12/02

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US11355530B2

公开(公告)日：2022-06-07

申请号：US17041852

申请日：2019-04-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yuichi Sato ,  Hitoshi Nakayama

IPC: H01L27/12 ,  H01L29/24 ,  H01L27/108

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

公开(公告)号：US09837545B2

公开(公告)日：2017-12-05

申请号：US15044428

申请日：2016-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

公开(公告)号：US09450104B2

公开(公告)日：2016-09-20

申请号：US14920244

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Masahiro Takahashi ,  Hideyuki Kishida

IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract translation: 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。