Invention Grant
- Patent Title: Semiconductor device having contact trenches extending from opposite sides of a semiconductor body
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Application No.: US17824198Application Date: 2022-05-25
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Publication No.: US12136670B2Publication Date: 2024-11-05
- Inventor: Markus Zundel , Andreas Meiser , Hans-Peter Lang , Thorsten Meyer , Peter Irsigler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/74
- IPC: H01L21/74 ; H01L21/02 ; H01L21/762 ; H01L21/8234 ; H01L23/48 ; H01L27/06 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/66 ; H01L29/78 ; H01L29/861 ; H01L29/40
Abstract:
A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.
Public/Granted literature
- US20220285550A1 Semiconductor Device Having Contact Trenches Extending from Opposite Sides of a Semiconductor Body Public/Granted day:2022-09-08
Information query
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