公开(公告)号：US11286158B2

公开(公告)日：2022-03-29

申请号：US16287232

申请日：2019-02-27

Applicant: Infineon Technologies AG

Inventor： Christian Ranacher ,  Banafsheh Abasahl ,  Cristina Consani ,  Thomas Grille ,  Peter Irsigler ,  Andreas Tortschanoff

IPC: B81B7/02 ,  B81B3/00 ,  G02B26/00 ,  G01J3/02 ,  G01N21/3504 ,  G01J3/42 ,  G01N21/03 ,  G01J3/26

Abstract: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

公开(公告)号：US11081382B2

公开(公告)日：2021-08-03

申请号：US16904076

申请日：2020-06-17

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Peter Irsigler

IPC: H01L21/683

Abstract: A method for processing a substrate assembly with a semiconductor device layer includes: arranging an auxiliary carrier at the substrate assembly such that a connection surface of the auxiliary carrier and a first surface of the substrate assembly directly adjoin each other; fixedly attaching the auxiliary carrier to the substrate assembly by melting a carrier portion of the auxiliary carrier and a substrate portion of the substrate assembly that directly adjoins the carrier portion such that the auxiliary carrier and the substrate assembly locally fuse only in fused portions of the auxiliary carrier and the substrate assembly, wherein the fused portions are laterally separated from each other by at least one unfused portion; and processing the semiconductor device layer of the substrate assembly with the auxiliary carrier fixedly attached to the substrate assembly.

公开(公告)号：US10607839B2

公开(公告)日：2020-03-31

申请号：US15635358

申请日：2017-06-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler ,  Thomas Wuebben

IPC: H01L21/265 ,  H01L21/324 ,  H01L29/06 ,  H01L29/36 ,  H01L29/78 ,  H01L29/868 ,  H01L29/66 ,  H01L29/32 ,  H01L21/263

Abstract: A method includes kicking out impurity atoms from substitutional sites of a crystal lattice of a semiconductor body by implanting particles via a first surface into the semiconductor body, reducing a thickness of the semiconductor body by removing semiconductor material of the semiconductor body, and annealing the semiconductor body in a first annealing process at a temperature of between 300° C. and 450° C. to diffuse impurity atoms out of the semiconductor body.

公开(公告)号：US20190270640A1

公开(公告)日：2019-09-05

申请号：US16287232

申请日：2019-02-27

Applicant: Infineon Technologies AG

Inventor： Christian Ranacher ,  Banafsheh Abasahl ,  Cristina Consani ,  Thomas Grille ,  Peter Irsigler ,  Andreas Tortschanoff

IPC: B81B7/02 ,  B81B3/00

Abstract: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

公开(公告)号：US10177033B2

公开(公告)日：2019-01-08

申请号：US15629165

申请日：2017-06-21

Applicant: Infineon Technologies AG

Inventor： Oliver Hellmund ,  Peter Irsigler ,  Sebastian Schmidt ,  Hans-Joachim Schulze ,  Martina Seider-Schmidt

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/48 ,  H01L23/495 ,  H01L23/482 ,  H01L29/06 ,  H01L23/00

Abstract: A method for forming a semiconductor device includes forming a plurality of non-semiconductor material portions at a first side of a semiconductor substrate; forming semiconductor material on the plurality of non-semiconductor material portions to bury the plurality of non-semiconductor material portions within semiconductor material; removing at least a portion of the semiconductor substrate from a second side of the semiconductor substrate to uncover the plurality of non-semiconductor material portions at a backside of the semiconductor device; and forming a rough surface at the backside of the semiconductor device by removing at least a subset of the plurality of non-semiconductor material portions while at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions remains or by removing at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions while the plurality of non-semiconductor material portions remain.

公开(公告)号：US10079284B2

公开(公告)日：2018-09-18

申请号：US15220794

申请日：2016-07-27

Applicant: Infineon Technologies AG

Inventor： Wolfgang Werner ,  Peter Irsigler ,  Andreas Meiser

IPC: H01L29/40 ,  H01L21/308 ,  H01L21/762 ,  H01L21/765 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/73 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/407 ,  H01L21/308 ,  H01L21/3083 ,  H01L21/76224 ,  H01L21/765 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66234 ,  H01L29/66666 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/73 ,  H01L29/7825 ,  H01L29/7827

Abstract: A method of manufacturing a structure in a semiconductor body comprises forming a first mask above a first surface of the semiconductor body. The first mask comprises an opening surrounding a first portion of the first mask, thereby separating the first portion and a second portion of the first mask. The semiconductor body is processed through the opening at the first surface. The opening is increased by removing at least part of the first mask in the first portion while maintaining the first mask in the second portion. The semiconductor body is further processed through the opening at the first surface.

公开(公告)号：US09939331B2

公开(公告)日：2018-04-10

申请号：US14284198

申请日：2014-05-21

Applicant: Infineon Technologies AG

Inventor： Jonathan Silvano de Sousa ,  Tobias Frischmuth ,  Peter Irsigler ,  Ulrich Schmid ,  Thomas Grille ,  Ursula Hedenig ,  Sylvicley Figueira da Silva

IPC: G01K7/00 ,  G01K7/34 ,  G01K1/02 ,  B81B3/00 ,  G01K13/00

CPC classification number: G01K7/34 ,  B81B3/0021 ,  G01K1/024 ,  G01K13/002

Abstract: Various embodiments disclosed herein include a capacitive thermometer including a deflectable membrane and a sense electrode. The deflectable membrane is configured to adjust a capacitive value based on a temperature of the deflectable membrane.

公开(公告)号：US20170288145A1

公开(公告)日：2017-10-05

申请号：US15626234

申请日：2017-06-19

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler ,  Guenther Ruhl

IPC: H01L51/00

CPC classification number: H01L51/0048 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/184 ,  C01B32/188 ,  H01L21/02373 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02612 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/7781 ,  H01L51/0002 ,  H01L51/0026 ,  H01L51/003 ,  H01L51/0558 ,  H01L51/057 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/932

Abstract: In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.

公开(公告)号：US20170236714A1

公开(公告)日：2017-08-17

申请号：US15584141

申请日：2017-05-02

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler

IPC: H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L21/02

CPC classification number: H01L21/2257 ,  H01L21/02238 ,  H01L21/02524 ,  H01L21/0257 ,  H01L21/02595 ,  H01L21/02636 ,  H01L21/2605 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/31105 ,  H01L21/3221 ,  H01L21/324 ,  H01L29/0623

Abstract: A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes: increasing a surface area of at least one of the first and second surfaces by an etch process; and oxidizing the increased surface area at a temperature of at least 1000° C. and for a duration of at least 20 minutes.

公开(公告)号：US20150270130A1

公开(公告)日：2015-09-24

申请号：US14217913

申请日：2014-03-18

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Peter Irsigler

IPC: H01L21/225 ,  H01L21/311 ,  H01L21/26 ,  H01L21/265 ,  H01L21/268 ,  H01L21/306 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/2257 ,  H01L21/02238 ,  H01L21/02524 ,  H01L21/0257 ,  H01L21/02595 ,  H01L21/02636 ,  H01L21/2605 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/31105 ,  H01L21/3221 ,  H01L21/324 ,  H01L29/0623

Abstract: A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes increasing a surface area of at least one of the first and second surfaces. The method further includes oxidizing the increased surface area at a temperature of at least 1000° C. and for a duration of at least 20 minutes.

Abstract translation: 从具有相反的第一和第二表面的晶体硅体去除晶体起始粒子的方法包括增加第一和第二表面中的至少一个的表面积。 该方法还包括在至少1000℃的温度下氧化增加的表面积并持续至少20分钟的持续时间。