Invention Grant
- Patent Title: Lateral diffused metal oxide semiconductor device
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Application No.: US18383461Application Date: 2023-10-24
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Publication No.: US12148826B2Publication Date: 2024-11-19
- Inventor: Zong-Han Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202111263331.0 20211026
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/06 ; H01L29/417 ; H01L29/78 ; H01L29/94

Abstract:
A lateral diffused metal oxide semiconductor (LDMOS) device includes a first fin-shaped structure on a substrate, a second fin-shaped structure adjacent to the first fin-shaped structure, a shallow trench isolation (STI) between the first fin-shaped structure and the second fin-shaped structure, a first gate structure on the first fin-shaped structure, a second gate structure on the second fin-shaped structure, and an air gap between the first gate structure and the second gate structure.
Public/Granted literature
- US20240055515A1 LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE Public/Granted day:2024-02-15
Information query
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