Invention Grant
- Patent Title: Semiconductor device with treated interfacial layer on silicon germanium
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Application No.: US18316550Application Date: 2023-05-12
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Publication No.: US12148843B2Publication Date: 2024-11-19
- Inventor: Chih-Yu Chang , Hsiang-Pi Chang , Zi-Wei Fang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/265 ; H01L21/28 ; H01L21/324 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L29/49 ; H01L29/66
Abstract:
A semiconductor device includes a silicon germanium channel, a germanium-free interfacial layer, a high-k dielectric layer, and a metal gate electrode. The silicon germanium channel is over a substrate. The germanium-free interfacial layer is over the silicon germanium channel. The germanium-free interfacial layer is nitridated. The high-k dielectric layer is over the germanium-free interfacial layer. The metal gate electrode is over the high-k dielectric layer.
Public/Granted literature
- US20230282753A1 SEMICONDUCTOR DEVICE WITH TREATED INTERFACIAL LAYER ON SILICON GERMANIUM Public/Granted day:2023-09-07
Information query
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