Invention Grant
- Patent Title: Method for predicting reliability of semiconductor device
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Application No.: US17587357Application Date: 2022-01-28
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Publication No.: US12152997B2Publication Date: 2024-11-26
- Inventor: Takuo Funaya
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rimon P.C.
- Priority: JP2021-020510 20210212
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/88 ; H01L23/00

Abstract:
A reliability prediction method includes: calculating a change of each of a plurality of alloy phases at a bonding portion between an electrode pad and a bonding wire; setting a generation of a metal oxide phase caused by a corrosion reaction, based on an initial crack structure of the bonding portion; calculating an elastic strain energy at each of specified portions of the bonding portion; setting a progress of a crack, based on the elastic strain energy at each of the specified portions; and predicting a lifetime of the semiconductor device, based on a length of the crack due to the progress of the crack.
Public/Granted literature
- US20220260504A1 METHOD FOR PREDICTING RELIABILITY OF SEMICONDUCTOR DEVICE Public/Granted day:2022-08-18
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