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US12154789B2 Etching method using halogen fluoride and method for producing semiconductor 有权

  • Patent Title: Etching method using halogen fluoride and method for producing semiconductor
  • Application No.: US17414041
    Application Date: 2019-12-09
  • Publication No.: US12154789B2
    Publication Date: 2024-11-26
  • Inventor: Atsushi Suzuki
  • Applicant: SHOWA DENKO K.K.
  • Applicant Address: JP Tokyo
  • Assignee: SHOWA DENKO K.K.
  • Current Assignee: SHOWA DENKO K.K.
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2018-239515 20181221
  • International Application: PCT/JP2019/048054 WO 20191209
  • International Announcement: WO2020/129725 WO 20200625
  • Main IPC: H01L21/3065
  • IPC: H01L21/3065 ;  H01L21/311
Etching method using halogen fluoride and method for producing semiconductor
Abstract:
A method for precise plasma etching of micropatterns on a silicon substrate containing silicon or additionally having a silicon oxide film. An etching method for plasma-etching a silicon substrate having silicon or a silicon oxide film using a halogen fluoride having a nitrogen (N2) content of 1 vol % or less as an etching gas. Also disclosed is a method for producing a semiconductor using the etching method.
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306 ......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065 .......等离子腐蚀；活性离子腐蚀
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