Invention Grant
- Patent Title: Semiconductor device and semiconductor package
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Application No.: US18065997Application Date: 2022-12-14
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Publication No.: US12154900B2Publication Date: 2024-11-26
- Inventor: Kentaro Nasu , Kenji Nishida
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: HSML P.C.
- Priority: JP2016-194316 20160930,JP2016-194317 20160930,JP2017-159596 20170822
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L23/522 ; H01L27/06 ; H01L27/088 ; H01L29/06 ; H01L29/423 ; H01L29/78 ; H01L21/8234 ; H01L23/495 ; H01L29/08 ; H01L29/417 ; H01L29/49
Abstract:
A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.
Public/Granted literature
- US20230112583A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE Public/Granted day:2023-04-13
Information query
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