公开(公告)号：US10090294B2

公开(公告)日：2018-10-02

申请号：US15449479

申请日：2017-03-03

Applicant: ROHM CO., LTD.

Inventor： Kenji Nishida ,  Shinpei Ohnishi ,  Kentaro Nasu

IPC: H01L29/866 ,  H01L27/06 ,  H01L29/739 ,  H01L29/423 ,  H01L29/06

Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.

公开(公告)号：USD822627S1

公开(公告)日：2018-07-10

申请号：US29598525

申请日：2017-03-27

Applicant: ROHM CO., LTD.

Designer： Kentaro Nasu ,  Kenji Nishida

公开(公告)号：US12154900B2

公开(公告)日：2024-11-26

申请号：US18065997

申请日：2022-12-14

Applicant: ROHM CO., LTD.

Inventor： Kentaro Nasu ,  Kenji Nishida

IPC: H01L27/02 ,  H01L23/522 ,  H01L27/06 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L21/8234 ,  H01L23/495 ,  H01L29/08 ,  H01L29/417 ,  H01L29/49

Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.

公开(公告)号：US10692863B2

公开(公告)日：2020-06-23

申请号：US15713015

申请日：2017-09-22

Applicant: ROHM CO., LTD.

Inventor： Kentaro Nasu ,  Kenji Nishida

IPC: H01L27/088 ,  H01L23/522 ,  H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/49 ,  H01L23/495 ,  H01L21/8234

Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.

公开(公告)号：USD823270S1

公开(公告)日：2018-07-17

申请号：US29598520

申请日：2017-03-27

Applicant: ROHM CO., LTD.

Designer： Kentaro Nasu ,  Kenji Nishida

公开(公告)号：US11557587B2

公开(公告)日：2023-01-17

申请号：US16874347

申请日：2020-05-14

Applicant: ROHM CO., LTD.

Inventor： Kentaro Nasu ,  Kenji Nishida

IPC: H01L27/08 ,  H01L27/088 ,  H01L23/522 ,  H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/49 ,  H01L23/495 ,  H01L21/8234

Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.

公开(公告)号：US10566325B2

公开(公告)日：2020-02-18

申请号：US16105518

申请日：2018-08-20

Applicant: ROHM CO., LTD.

Inventor： Kenji Nishida ,  Shinpei Ohnishi ,  Kentaro Nasu

IPC: H01L27/06 ,  H01L29/866 ,  H01L29/739 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/16 ,  H01L29/20

Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.

公开(公告)号：USD822628S1

公开(公告)日：2018-07-10

申请号：US29598531

申请日：2017-03-27

Applicant: ROHM CO., LTD.

Designer： Kentaro Nasu ,  Kenji Nishida