Invention Grant
- Patent Title: Anti-stiction process for MEMS device
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Application No.: US17719986Application Date: 2022-04-13
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Publication No.: US12157667B2Publication Date: 2024-12-03
- Inventor: Jui-Chun Weng , Lavanya Sanagavarapu , Ching-Hsiang Hu , Wei-Ding Wu , Shyh-Wei Cheng , Ji-Hong Chiang , Hsin-Yu Chen , Hsi-Cheng Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00 ; H01J37/34 ; H01L21/02

Abstract:
A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.
Public/Granted literature
- US20220242724A1 ANTI-STICTION PROCESS FOR MEMS DEVICE Public/Granted day:2022-08-04
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