Invention Grant
- Patent Title: High performance semiconductor device
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Application No.: US17371410Application Date: 2021-07-09
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Publication No.: US12159817B2Publication Date: 2024-12-03
- Inventor: Sung Chul Joo , Ulf Hakan Andre
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Coats & Bennett, PLLC
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/31 ; H01L23/66 ; H05K1/18 ; H05K3/34
Abstract:
A semiconductor device comprises a lead, a board, and an electrically conductive layer on the board. The lead comprises a longitudinal axis and is soldered to the electrically conductive layer. The semiconductor device further comprises a first solder dam edge and a second solder dam edge, each positioned on the lead not more than 10 mils apart from each other along the longitudinal axis.
Public/Granted literature
- US20230010770A1 High Performance Semiconductor Device Public/Granted day:2023-01-12
Information query
IPC分类:
