Invention Grant
- Patent Title: Method for resetting an array of resistive memory cells
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Application No.: US17782423Application Date: 2020-12-01
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Publication No.: US12165706B2Publication Date: 2024-12-10
- Inventor: Gabriel Molas , Alessandro Bricalli , Guiseppe Piccolboni , Amir Regev
- Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES , WEEBIT NANO LTD
- Applicant Address: FR Paris; IL Hod-Hasharon
- Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES,WEEBIT NANO LTD
- Current Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES,WEEBIT NANO LTD
- Current Assignee Address: FR Paris; IL Hod-Hasharon
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Priority: EP19306570 20191204
- International Application: PCT/EP2020/084094 WO 20201201
- International Announcement: WO2021/110666 WO 20210610
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
A method for resetting an array of RAM cells by applying a sequence of N reset operations, the method including at a first reset operation, defining a first reset technique and performing the first reset operation; at a j-th reset operation of a N−1 subsequent reset operations, j being an integer between 2 and N, if a correction yield of the reset technique used at the (j−1)-th reset operation fulfils a predefined condition, applying the reset technique used at the (j−1)-th reset operation to perform the j-th reset operation, if the correction yield does not fulfil the predefined condition, defining a new reset technique and applying the new reset technique to perform the j-th reset operation, the correction yield being a cumulative correction yield or a relative correction yield, the correction yield for the N reset operations being measured prior to the first reset operation.
Public/Granted literature
- US20230008586A1 METHOD FOR RESETTING AN ARRAY OF RESISTIVE MEMORY CELLS Public/Granted day:2023-01-12
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