Method for resetting an array of resistive memory cells
Abstract:
A method for resetting an array of RAM cells by applying a sequence of N reset operations, the method including at a first reset operation, defining a first reset technique and performing the first reset operation; at a j-th reset operation of a N−1 subsequent reset operations, j being an integer between 2 and N, if a correction yield of the reset technique used at the (j−1)-th reset operation fulfils a predefined condition, applying the reset technique used at the (j−1)-th reset operation to perform the j-th reset operation, if the correction yield does not fulfil the predefined condition, defining a new reset technique and applying the new reset technique to perform the j-th reset operation, the correction yield being a cumulative correction yield or a relative correction yield, the correction yield for the N reset operations being measured prior to the first reset operation.
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