Invention Grant
- Patent Title: Optical proximity correction method and method of manufacturing extreme ultraviolet mask by using the same
-
Application No.: US17651627Application Date: 2022-02-18
-
Publication No.: US12181792B2Publication Date: 2024-12-31
- Inventor: Narak Choi , Dongwon Kang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2021-0084742 20210629
- Main IPC: G03F1/36
- IPC: G03F1/36 ; G03F7/00

Abstract:
An optical proximity correction (OPC) method of effectively imitating a mask topography effect for a mask having a curvilinear pattern includes generating a library for edge filters of a near field by using an electromagnetic field simulation; generating an any-angle edge filter by using the library; for a mask having a curvilinear pattern, generating a first mask image by using thin mask approximation; determining whether the curvilinear pattern satisfies a reference; when the curvilinear pattern satisfies the reference, performing skewed Manhattanization on the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern.
Public/Granted literature
Information query