公开(公告)号：US09461003B1

公开(公告)日：2016-10-04

申请号：US14995467

申请日：2016-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jimyung Kim ,  Yigwon Kim ,  Suhyun Kim ,  Kwangsub Yoon ,  Bumjoon Youn ,  Narak Choi

IPC: H01L27/146 ,  H01L23/552 ,  H01L23/58 ,  H01L23/544

CPC classification number: H01L23/552 ,  G03F7/70633 ,  H01L23/5225 ,  H01L23/585

Abstract: A semiconductor device includes a circuit pattern on a substrate, a shielding pattern on the circuit pattern and constituted by a plurality of parallel bars, and lower overlay marking on the shielding pattern and constituted by a plurality of parallel bars which define parallel slits between the bars. The pitch of the bars of the shielding pattern is smaller than the pitch of the bars of the lower overlay marking.

Abstract translation: 半导体器件包括衬底上的电路图案，电路图案上的屏蔽图案并由多个平行条构成，并且在屏蔽图案上形成下覆盖标记，并且由多个平行的条构成，所述平行条在条之间形成平行的狭缝 。 屏蔽图案的条的间距小于下覆盖标记的条的间距。

公开(公告)号：US11169437B2

公开(公告)日：2021-11-09

申请号：US16849258

申请日：2020-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul Yeo ,  Narak Choi

IPC: G03F1/36

Abstract: An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.

公开(公告)号：US20210072637A1

公开(公告)日：2021-03-11

申请号：US16849258

申请日：2020-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchul Yeo ,  Narak Choi

IPC: G03F1/36

Abstract: An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.

公开(公告)号：US12181792B2

公开(公告)日：2024-12-31

申请号：US17651627

申请日：2022-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narak Choi ,  Dongwon Kang

IPC: G03F1/36 ,  G03F7/00

Abstract: An optical proximity correction (OPC) method of effectively imitating a mask topography effect for a mask having a curvilinear pattern includes generating a library for edge filters of a near field by using an electromagnetic field simulation; generating an any-angle edge filter by using the library; for a mask having a curvilinear pattern, generating a first mask image by using thin mask approximation; determining whether the curvilinear pattern satisfies a reference; when the curvilinear pattern satisfies the reference, performing skewed Manhattanization on the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern.

公开(公告)号：US20220413377A1

公开(公告)日：2022-12-29

申请号：US17651627

申请日：2022-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Narak Choi ,  Dongwon Kang

IPC: G03F1/36 ,  G03F7/20

Abstract: An optical proximity correction (OPC) method of effectively imitating a mask topography effect for a mask having a curvilinear pattern includes generating a library for edge filters of a near field by using an electromagnetic field simulation; generating an any-angle edge filter by using the library; for a mask having a curvilinear pattern, generating a first mask image by using thin mask approximation; determining whether the curvilinear pattern satisfies a reference; when the curvilinear pattern satisfies the reference, performing skewed Manhattanization on the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern.