- Patent Title: System and method for modeling damages caused by incident particles
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Application No.: US17491739Application Date: 2021-10-01
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Publication No.: US12182486B2Publication Date: 2024-12-31
- Inventor: Sangwoon Lee , Joohyun Jeon , Sungjin Kim , Seunghyun Kim , Wonki Roh , Chulwoo Park , Seongjae Byeon , Taeyoon An , Hyoeun Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: MORGAN, LEWIS & BOCKIUS LLP
- Priority: KR10-2021-0039838 20210326
- Main IPC: G06F30/3308
- IPC: G06F30/3308 ; G06F30/25

Abstract:
A method of modeling damages to a crystal caused by an incident particle includes obtaining particle information and crystal information; estimating energy loss of the incident particle based on the particle information and the crystal information; estimating a volume of a vacancy based on the energy loss; estimating a vacancy reaction based on the crystal information and the volume of the vacancy; and generating output data based on the vacancy reaction, the output data including quantification data of the damages.
Public/Granted literature
- US20220309216A1 SYSTEM AND METHOD FOR MODELING DAMAGES CAUSED BY INCIDENT PARTICLES Public/Granted day:2022-09-29
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