A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a cross-coupled gate circuit in a three-dimensional (3D) stack including a plurality of transistors, a first gate line of a first transistor among the plurality of transistors connected to a fourth gate line of a fourth transistor among the plurality of transistors, a second gate line of a second transistor among the plurality of transistors connected to a third gate line of a third transistor among the plurality of transistors, a first conductor connecting the first gate line and the fourth gate line, a second conductor connecting the second gate line and the third gate line. The first gate line and the second gate line are arranged above the third gate line and the fourth gate line, respectively.