Invention Grant
- Patent Title: Accessing memory devices via switchable channels
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Application No.: US17898160Application Date: 2022-08-29
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Publication No.: US12189958B2Publication Date: 2025-01-07
- Inventor: Chulbum Kim , Sundararajan Sankaranarayanan , Xiangyu Tang , Dustin J. Carter
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: LOWENSTEIN SANDLER LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory sub-system includes a memory sub-system controller comprising a plurality of controller channels, one or more memory devices, each of which comprises a respective plurality of memory dies, and a channel switch circuit coupled between the plurality of the controller channels and a plurality of memory channels of the one or more memory devices, where each memory channel corresponds to a respective one of the plurality of memory dies of one of the memory devices, the channel switch circuit comprising command processing logic configured to: receive, from the memory sub-system controller, a plurality of channel mappings, each of which identifies a particular one of the controller channels and a particular one of the memory channels, and route data from each controller channel to a respective one of the memory channels that is associated with the controller channel by a respective one of the channel mappings.
Public/Granted literature
- US20240069738A1 ACCESSING MEMORY DEVICES VIA SWITCHABLE CHANNELS Public/Granted day:2024-02-29
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