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公开(公告)号:US12189958B2
公开(公告)日:2025-01-07
申请号:US17898160
申请日:2022-08-29
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Sundararajan Sankaranarayanan , Xiangyu Tang , Dustin J. Carter
IPC: G06F3/06
Abstract: A memory sub-system includes a memory sub-system controller comprising a plurality of controller channels, one or more memory devices, each of which comprises a respective plurality of memory dies, and a channel switch circuit coupled between the plurality of the controller channels and a plurality of memory channels of the one or more memory devices, where each memory channel corresponds to a respective one of the plurality of memory dies of one of the memory devices, the channel switch circuit comprising command processing logic configured to: receive, from the memory sub-system controller, a plurality of channel mappings, each of which identifies a particular one of the controller channels and a particular one of the memory channels, and route data from each controller channel to a respective one of the memory channels that is associated with the controller channel by a respective one of the channel mappings.
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公开(公告)号:US20230075279A1
公开(公告)日:2023-03-09
申请号:US17468264
申请日:2021-09-07
Applicant: Micron Technology, Inc.
Inventor: Suresh Rajgopal , Chulbum Kim , Dustin J. Carter
Abstract: An input/output (I/O) command referencing a logical address of a memory sub-system is received by an active input/output expander (AIOE). The I/O command is received from a memory sub-system controller via the AIOE. The AIOE identifies a physical block address corresponding to the logical block address. The AIOE identifies, among a plurality of memory devices, a memory device associated with the physical block address. The AIOE converts the I/O command received via the serial interface to a parallel interface compliant I/O command. The AIOE sends the parallel interface compliant I/O command to the memory device.
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公开(公告)号:US20230043140A1
公开(公告)日:2023-02-09
申请号:US17963773
申请日:2022-10-11
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Mark A. Helm , Yoav Weinberg
Abstract: Methods, systems, and devices for status check using chip enable pin are described. An apparatus may include a memory device, a pin coupled with the memory device, and a driver coupled with the pin and configured to bias the pin to a first a voltage or a second voltage based on a status of the memory device. The status may indicate, for example, whether the memory device is available to receive a command. The driver may bias the pin to a first voltage based on a first status of the memory device indicating that the memory device is busy. Additionally, or alternatively, the driver may bias the pin to a second voltage based on a second status of the memory device indicating that the memory device is available to receive the command. In some cases, the pin may be an example of a chip enable pin.
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公开(公告)号:US11942159B2
公开(公告)日:2024-03-26
申请号:US17591510
申请日:2022-02-02
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Brian Kwon , Erwin E. Yu , Kitae Park , Taehyun Kim
CPC classification number: G11C16/14 , G06F3/0604 , G06F3/0659 , G06F3/0679 , G11C16/0483 , G11C16/225 , G11C16/32
Abstract: A memory device includes a memory array of memory cells and control logic operatively coupled with the memory array. The control logic is to perform operations including: initiating a true erase sub-operation by causing an erase pulse to be applied to one or more sub-blocks of the memory array; tracking, a number of suspend commands received from a processing device during time periods that a memory line of the memory array is caused to ramp towards an erase voltage of the erase pulse; causing, in response to receiving each suspend command, the true erase sub-operation to be suspended to enable performing a non-erase memory operation; and in response to the number of suspend commands satisfying a threshold criterion, alerting the processing device to terminate sending suspend commands until after completion of the true erase sub-operation.
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公开(公告)号:US20230350587A1
公开(公告)日:2023-11-02
申请号:US18137002
申请日:2023-04-20
Applicant: Micron Technology, Inc.
Inventor: Jeremy Binfet , Liang Yu , Jonathan S. Parry , Chulbum Kim , Daniel J. Hubbard , Suresh Rajgopal
IPC: G06F3/06
CPC classification number: G06F3/0625 , G06F3/0658 , G06F3/0679
Abstract: A memory device includes memory dies, each memory die including a memory array and control logic, operatively coupled with the memory array, to perform peak power management (PPM) operations. The PPM operations include receiving a request to perform an operation, determining whether to initiate a PPM priority override procedure, and in response to determining to initiate the PPM priority override procedure, performing the PPM priority override procedure to execute the operation. Performing the PPM priority override procedure includes reconfiguring each high current breakpoints as a respective low current breakpoint to execute the operation.
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公开(公告)号:US11500791B2
公开(公告)日:2022-11-15
申请号:US17117933
申请日:2020-12-10
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Mark A. Helm , Yoav Weinberg
Abstract: Methods, systems, and devices for status check using chip enable pin are described. An apparatus may include a memory device, a pin coupled with the memory device, and a driver coupled with the pin and configured to bias the pin to a first a voltage or a second voltage based on a status of the memory device. The status may indicate, for example, whether the memory device is available to receive a command. The driver may bias the pin to a first voltage based on a first status of the memory device indicating that the memory device is busy. Additionally, or alternatively, the driver may bias the pin to a second voltage based on a second status of the memory device indicating that the memory device is available to receive the command. In some cases, the pin may be an example of a chip enable pin.
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公开(公告)号:US20250077086A1
公开(公告)日:2025-03-06
申请号:US18950798
申请日:2024-11-18
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Sundararajan Sankaranarayanan , Xiangyu Tang , Dustin J. Carter
IPC: G06F3/06
Abstract: A memory sub-system includes a memory sub-system controller comprising a plurality of controller channels, wherein the memory sub-system controller provides a plurality of channel mappings, wherein a first channel mapping of the plurality of channel mappings identifies a first controller channel of the plurality of controller channels and one or more first memory channels of a plurality of memory channels, and wherein a second channel mapping of the plurality of channel mappings identifies a second controller channel of the plurality of controller channels and one or more second memory channels of the plurality of memory channels; one or more memory devices comprising the plurality of memory channels, wherein the one or more memory devices comprise a plurality of memory dies, wherein each memory channel of the plurality of memory channels corresponds to a respective one of the plurality of memory dies; and a channel switch circuit coupled between the plurality of the controller channels and the plurality of memory channels, wherein each controller channel of the plurality of the controller channels is capable to be mapped to the plurality of memory channels for data routing.
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公开(公告)号:US20240203508A1
公开(公告)日:2024-06-20
申请号:US18589730
申请日:2024-02-28
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Brian Kwon , Erwin E. Yu , Kitae Park , Taehyun Kim
CPC classification number: G11C16/14 , G06F3/0604 , G06F3/0659 , G06F3/0679 , G11C16/0483 , G11C16/225 , G11C16/32
Abstract: A memory device includes a memory array comprising memory cells and control logic operatively coupled with the memory array. The control logic causes, as part of a true erase sub-operation, an erase pulse to be applied to one or more sub-blocks of the memory array. The control logic tracks a number of suspend commands received from a processing device, including suspend commands received while memory cells of the one or more sub-blocks are being erased. The control logic causes, in response to receiving each suspend command, the true erase sub-operation to be suspended to enable performing a non-erase memory operation. The control logic, in response to the number of suspend commands satisfying a threshold criterion, alerts the processing device to terminate sending suspend commands.
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公开(公告)号:US20240168536A1
公开(公告)日:2024-05-23
申请号:US18503319
申请日:2023-11-07
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Liang Yu , Jonathan S. Parry , Chulbum Kim , Tal Sharifie , Stephen Hanna
IPC: G06F1/3225
CPC classification number: G06F1/3225
Abstract: A memory device includes a set of memory dies, each memory die of the set of memory dies including a memory array and first control logic operatively coupled to the memory array, and an application-specific integrated circuit (ASIC) including a general-purpose input/output component (GPIO) including at least one digital pad communicably coupled to each memory die of the set of memory dies, and second control logic, operatively coupled to memory, to perform operations related to peak power management (PPM).
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公开(公告)号:US20240061592A1
公开(公告)日:2024-02-22
申请号:US18231338
申请日:2023-08-08
Applicant: Micron Technology, Inc.
Inventor: Chulbum Kim , Jonathan S. Parry , Luca Nubile , Ali Mohammadzadeh , Biagio Iorio , Liang Yu , Jeremy Binfet , Walter Di Francesco , Daniel J. Hubbard , Luigi Pilolli
IPC: G06F3/06 , G06F1/3234
CPC classification number: G06F3/0625 , G06F3/0659 , G06F3/0679 , G06F1/3275
Abstract: A method includes receiving a request to perform a memory access operation, wherein the memory access operation includes a set of sub-operations, selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the respective sub-operation based on a set of peak power management (PPM) operation parameters, and causing the memory access operation to be performed using PPM based on the current quantization data structure.
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