Invention Grant
- Patent Title: Voltage generation circuit and semiconductor memory device
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Application No.: US17901512Application Date: 2022-09-01
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Publication No.: US12190967B2Publication Date: 2025-01-07
- Inventor: Takumi Fujimoto
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2022-047396 20220323
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G11C16/04 ; G11C16/30 ; G11C5/14 ; G11C16/32
Abstract:
A voltage generation circuit includes a plurality of charge pumps connected to a first node, and a control circuit that controls the number of active charge pumps among the plurality of charge pumps based on a period in which a voltage of the first node satisfies a condition.
Public/Granted literature
- US20230307066A1 VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2023-09-28
Information query
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