Invention Grant
- Patent Title: Substrate treatment method and substrate treatment system
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Application No.: US17268362Application Date: 2019-08-21
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Publication No.: US12197129B2Publication Date: 2025-01-14
- Inventor: Satoru Shimura , Soichiro Okada , Masashi Enomoto , Hidetami Yaegashi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2018-156625 20180823
- International Application: PCT/JP2019/032581 WO 20190821
- International Announcement: WO2020/040178 WO 20200227
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/16 ; H01L21/027

Abstract:
A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, making a determination of which one of a first treatment and a second treatment to perform based on the treatment object substrate. In response to the determination determining to perform the first treatment, performing the first treatment of decreasing a polarity of the base film to bring it closer to a polarity of the resist solution. In response to the determination determining to perform the second treatment, performing a treatment of increasing the polarity of the base film to bring it closer to the polarity of the resist solution.
Public/Granted literature
- US20210318618A1 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT SYSTEM Public/Granted day:2021-10-14
Information query
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