公开(公告)号：US11205571B2

公开(公告)日：2021-12-21

申请号：US16575674

申请日：2019-09-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi ,  Soichiro Okada

IPC: H01L21/027 ,  G03F7/40 ,  G03F7/039

Abstract: There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.

公开(公告)号：US10211050B2

公开(公告)日：2019-02-19

申请号：US15237840

申请日：2016-08-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi ,  Kenichi Oyama ,  Masatoshi Yamato ,  Tomohiro Iseki ,  Toyohisa Tsuruda

IPC: G03F7/20 ,  G03F7/36 ,  G03F7/004 ,  H01L21/027 ,  H01L21/31 ,  H01L21/469

Abstract: There is provided a semiconductor device manufacturing method, including: a film forming process in which, by supplying a solution for modifying a surface layer of a resist to a target object having a resist pattern and allowing the solution to infiltrate into the resist, a film having elasticity and having no compatibility with the resist is formed in the surface layer of the resist; and a heating process in which the target object having the film formed thereon is heated.

公开(公告)号：US09818612B2

公开(公告)日：2017-11-14

申请号：US15008529

申请日：2016-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0338 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/76816

Abstract: Disclosed is a method for manufacturing a semiconductor device. The method includes: a first pattern forming step of forming, on a pattern forming target film, a first film that is patterned to have a first pattern that includes lines which are aligned with each other with spaces of a predetermined interval being interposed therebetween, and include a portion separated by using a first cut mask; a step of forming a second film to cover a surface of the first film; and a second pattern forming step of forming a pattern forming target film that is patterned to have a second pattern, by separating a portion of the space of the first step using a second cut mask. The first and second cut mask includes a plurality of openings or light shielding portions that have equal shapes, respectively.

公开(公告)号：US09023225B2

公开(公告)日：2015-05-05

申请号：US14038345

申请日：2013-09-26

Applicant: Tokyo Electron Limited

Inventor： Kenichi Oyama ,  Hidetami Yaegashi

IPC: H01L21/306 ,  H01L21/308 ,  B81C1/00

CPC classification number: H01L21/306 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/3086

Abstract: A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.

Abstract translation: 图案形成方法包括在基板上形成图案形成材料膜作为蚀刻靶膜，所述图案形成材料膜具有曝光时具有孔隙率的曝光部分和非曝光部分，图案化和曝光图案形成材料膜，用于 暴露部分具有孔隙率，选择性地将填充材料渗透到曝光部分的空隙中以加强曝光部分，以及通过干蚀刻去除图案形成材料膜的非曝光部分以形成预定图案。

公开(公告)号：US20200090927A1

公开(公告)日：2020-03-19

申请号：US16575674

申请日：2019-09-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi ,  Soichiro Okada

IPC: H01L21/027 ,  G03F7/40

Abstract: There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.

公开(公告)号：US10573530B2

公开(公告)日：2020-02-25

申请号：US15430640

申请日：2017-02-13

Applicant: Tokyo Electron Limited

Inventor： Hidetami Yaegashi

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/02

Abstract: Disclosed is a pattern forming method including: forming an acrylic resin layer on an underlayer; forming an intermediate layer on the acrylic resin layer; forming a patterned EUV resist layer on the intermediate layer; forming a pattern on the acrylic resin layer by etching the intermediate layer and the acrylic resin layer with the EUV resist layer as an etching mask; removing the EUV resist layer and the intermediate layer after the pattern is formed on the acrylic resin layer; and smoothing a surface of the acrylic resin layer after the EUV resist layer and the intermediate layer are removed.

公开(公告)号：US12197129B2

公开(公告)日：2025-01-14

申请号：US17268362

申请日：2019-08-21

Applicant: Tokyo Electron Limited

Inventor： Satoru Shimura ,  Soichiro Okada ,  Masashi Enomoto ,  Hidetami Yaegashi

IPC: G03F7/11 ,  G03F7/16 ,  H01L21/027

Abstract: A substrate treatment method of treating a treatment object substrate includes before applying a resist solution for forming a resist film onto a base film formed on a substrate surface of the treatment object substrate, making a determination of which one of a first treatment and a second treatment to perform based on the treatment object substrate. In response to the determination determining to perform the first treatment, performing the first treatment of decreasing a polarity of the base film to bring it closer to a polarity of the resist solution. In response to the determination determining to perform the second treatment, performing a treatment of increasing the polarity of the base film to bring it closer to the polarity of the resist solution.

公开(公告)号：US10741444B2

公开(公告)日：2020-08-11

申请号：US16406059

申请日：2019-05-08

Applicant: Tokyo Electron Limited

Inventor： Hidetami Yaegashi

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/285 ,  G03F7/20 ,  G03F7/16

Abstract: In a method according to an exemplary embodiment, a substrate is prepared in a chamber. A patterned resist mask has been formed on a first region of the substrate. A surface of the substrate in a second region is exposed. A film is formed on the substrate in the chamber by sputtering. The film is formed on the substrate in a manner that particles emitted obliquely downward from a target are caused to be incident onto the substrate.

公开(公告)号：US09690185B2

公开(公告)日：2017-06-27

申请号：US14619700

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi

IPC: G03D5/00 ,  G03D13/00 ,  G03F7/039 ,  G03F7/30 ,  G03F7/40 ,  H01L21/67

CPC classification number: G03D13/00 ,  G03F7/039 ,  G03F7/3021 ,  G03F7/405 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67178

Abstract: A substrate processing method performs a photolithography processing on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.

公开(公告)号：US09679770B2

公开(公告)日：2017-06-13

申请号：US14619616

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi

IPC: C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  B44C1/22 ,  H01L21/033 ,  H01L21/67

CPC classification number: H01L21/0337 ,  H01L21/67178

Abstract: A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film.