Invention Grant
- Patent Title: Method to control the relaxation of thick films on lattice-mismatched substrates
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Application No.: US17576716Application Date: 2022-01-14
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Publication No.: US12211955B2Publication Date: 2025-01-28
- Inventor: Kamruzzaman Khan , Elaheh Ahmadi , Stacia Keller , Christian Wurm , Umesh K. Mishra
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/00
Abstract:
A substrate comprising a III-N base layer comprising a first portion and a second portion, the first portion of the III-N base layer having a first natural lattice constant and a first dislocation density; and a first III-N layer having a second natural lattice constant and a second dislocation density on the III-N base layer, the first III-N layer having a thickness greater than 10 nm. An indium fractional composition of the first III-N layer is greater than 0.1; the second natural lattice constant is at least 1% greater than the first natural lattice constant; a strain-induced lattice constant of the first III-N layer is greater than 1.0055 times the first natural lattice constant; and the second dislocation density is less than 1.5 times the first dislocation density.
Public/Granted literature
- US20220399475A1 METHOD TO CONTROL THE RELAXATION OF THICK FILMS ON LATTICE-MISMATCHED SUBSTRATES Public/Granted day:2022-12-15
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